BF1100WR_2015 datasheet(2/14 Pages) JMNIC

tên linh kiện	BF1100WR_2015

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1995 Apr 25

2

Philips Semiconductors

Product speciﬁcation

Dual-gate MOS-FET

BF1100WR

FEATURES

• Specially designed for use at 9 to 12 V supply voltage

• Short channel transistor with high forward transfer

admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications such as television tuners and

professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic

microminiature SOT343R package. The transistor

consists of an amplifier MOS-FET with source and

substrate interconnected and an internal bias circuit to

ensure good cross-modulation performance during AGC.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

SYMBOL

DESCRIPTION

1

s, b

source

2

d

drain

3g2

gate 2

4g1

gate 1

Fig.1 Simplified outline (SOT343R) and symbol.

Marking code: MF.

handbook, halfpage

MAM192

s,b

d

g

1

g

2

Top view

21

34

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

drain-source voltage

−−

14

V

ID

drain current

−−

30

mA

Ptot

total power dissipation

−−

280

mW

Tj

operating junction temperature

−−

150

°C

yfs

forward transfer admittance

24

28

33

mS

Cig1-s

input capacitance at gate 1

−

2.2

2.6

pF

Crs

reverse transfer capacitance

f = 1 MHz

−

25

35

fF

F

noise ﬁgure

f = 800 MHz

−

2

−

dB

Số phần tương tự - BF1100WR_2015

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Quanzhou Jinmei Electro...	BF1100WR	106Kb / 14P	Dual-gate MOS-FET

More results

Mô tả tương tự - BF1100WR_2015

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BF1100WR	146Kb / 14P	Dual-gate MOS-FET 1995 Apr 25
Quanzhou Jinmei Electro...	BF1100WR	106Kb / 14P	Dual-gate MOS-FET
NXP Semiconductors	BF1100WR	471Kb / 16P	Dual-gate MOS-FET 1995 Apr 25
	BF1204	110Kb / 12P	Dual N-channel dual gate MOS-FET 2001 Apr 25
	BF1205	185Kb / 24P	Dual N-channel dual gate MOS-FET 2003 Sep 30
	BF1206	186Kb / 21P	Dual N-channel dual-gate MOS-FET 2003 Nov 17
Quanzhou Jinmei Electro...	BF1205C_2015	179Kb / 22P	Dual N-channel dual gate MOS-FET
	BF1206_2015	192Kb / 21P	Dual N-channel dual-gate MOS-FET
	BF1205C	179Kb / 22P	Dual N-channel dual gate MOS-FET
	BF1206	192Kb / 21P	Dual N-channel dual-gate MOS-FET

More results

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