1N5711 datasheet(4/6 Pages) HP

tên linh kiện	1N5711

Giải thích chi tiết về linh kiện	Schottky Barrier Diodes for General Purpose Applications

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Typical Parameters

VF – FORWARD VOLTAGE (V)

Figure 1. I-V Curve Showing Typical

Temperature Variation for 5082-2300

Series and 5082-2900 Schottky Diodes.

100

10

1

0.1

0.01

0

0.10

0.20

0.30

0.40

0.50

0.60

100

°C

50

°C

25

°C

0

°C

–50

°C

VBR (V)

Figure 2. 5082-2300 Series Typical

Reverse Current vs. Reverse Voltage

at Various Temperatures.

10.000

1,000

100

10

1

0

5

10

15

100

75

50

25

TA = 25°C

IF - FORWARD CURRENT (mA)

Figure 3. 5082-2300 Series and 5082-2900

Typical Dynamic Resistance (RD) vs.

Forward Current (IF).

1000

100

10

0.01

0

10

100

VR - REVERSE VOLTAGE (V)

Figure 4. 5082-2300 and 5082-2900

Typical Capacitance vs. Reverse

Voltage.

1.2

1.0

0.8

0.6

0.4

0.2

0

4

8

121620

5082-2900

5082-2303

VF - FORWARD VOLTAGE (V)

Figure 5. I-V Curve Showing Typical

Temperature Variation for 5082-2800

or 1N5711 Schottky Diodes.

50

10

5

1

0.5

0.1

0.05

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

–50

°C

0

°C

+25

°C

+100

°C

+150

°C

+50

°C

VR - REVERSE VOLTAGE (V)

Figure 6. (5082-2800 OR 1N5711)

Typical Variation of Reverse Current

(IR) vs. Reverse Voltage (VR) at

Various Temperatures.

100,000

10,000

1000

100

10

1

0

0.2

0.4

0.6

0.8

1.0

1.2

150

125

100

50

25

75

0

TA = °C

VR - REVERSE VOLTAGE (V)

Figure 7. (5082-2800 or 1N5711)

Typical Capacitance (CT) vs. Reverse

Voltage (VR).

12.0

1.5

1.0

0.5

0

010

20

30

40

50

VF - FORWARD VOLTAGE (V)

Figure 8. I-V Curve Showing Typical

Temperature Variation for the 5082-

2810 or 1N5712 Schottky Diode.

100

10

1.0

0.1

0.01

0

0.4

0.2

0.6

0.8

1.0

1.2

–50

°C

0

°C

+25

°C

+50

°C

+100

°C

+150

°C

VR - REVERSE VOLTAGE (V)

Figure 9. (5082-2810 or IN5712)

Typical Variation of Reverse Current

(IR) vs. Reverse Voltage (VR) at

Various Temperatures.

10,000

1000

100

10

1.0

010

515

20

25

30

150

125

100

75

50

25

TA = °C

Số phần tương tự - 1N5711

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	1N5711	52Kb / 3P	SMALL SIGNAL SCHOTTKY DIODE August 1999 Ed: 1A
EIC discrete Semiconduc...	1N5711	36Kb / 2P	SCHOTTKY BARRIER DIODES
AVAGO TECHNOLOGIES LIMI...	1N5711	264Kb / 7P	Pico Second Switching Speed
Compensated Deuices Inc...	1N5711	25Kb / 2P	SCHOTTKY BARRIER DIODES
Microsemi Corporation	1N5711	67Kb / 3P	SCHOTTKY BARRIER DIODES

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Mô tả tương tự - 1N5711

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
New Jersey Semi-Conduct...	1N5711	124Kb / 1P	Schottky Barrier Diodes for General Purpose Applications
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Microsemi Corporation	GC9700	130Kb / 2P	SCHOTTKY BARRIER DIODES General Purpose TM
Micro Commercial Compon...	BAT42W	244Kb / 3P	200mW Schottky Diodes 30 Volts For General Purpose applications
NXP Semiconductors	BAS40	227Kb / 21P	General-purpose Schottky diodes Rev. 08-13 January 2010
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