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NEZ1011-2E bảng dữ liệu(PDF) 1 Page - NEC |
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NEZ1011-2E bảng dữ liệu(HTML) 1 Page - NEC |
1 / 12 page The information in this document is subject to change without notice. N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET 1998 © Document No. P13725EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan DATA SHEET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability. FEATURES • High Output Power : Po (1 dB) = +34.0 dBm typ. • High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E) • High Efficiency : 30 % typ. • Input and Output Internally Matched for Optimum performance ORDERING INFORMATION Part Number Package NEZ1011-2E NEZ1414-2E T-78 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-2E, NEZ1414-2E) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Gate to Source Voltage VGS –7 V Drain Current IDS 3.0 (NEZ1011-2E) 2.5 (NEZ1414-2E) A Gate Forward Current IGF +20 mA Gate Reverse Current IGR –20 mA Total Power Dissipation PT 15 W Channel Temperature Tch 175 °C Storage Temperature Tstg –65 to +175 °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. |
Số phần tương tự - NEZ1011-2E |
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Mô tả tương tự - NEZ1011-2E |
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