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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
1999
MOS INTEGRATED CIRCUIT
MC-4R64CEE6B, 4R64CEE6C
Direct Rambus
TM DRAM RIMMTM Module
64M-BYTE (32M-WORD x 16-BIT)
PRELIMINARY DATA SHEET
Document No. M14537EJ1V1DS00 (1st edition)
Date Published November 1999 NS CP (K)
Printed in Japan
The mark 5
5
5
5 shows major revised points.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices
(
µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of
Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
• Each RDRAM® has 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Low power and powerdown self refresh modes
• Separate Row and Column buses for higher efficiency


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