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LS120 bảng dữ liệu(PDF) 1 Page - Micross Components |
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LS120 bảng dữ liệu(HTML) 1 Page - Micross Components |
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1 / 1 page  Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES Direct Replacement for INTERSIL IT120 HIGH hFE @ LOW CURRENT ≥ 200 @ 10µA OUTPUT CAPACITANCE ≤ 2.0pF VBE tracking ≤ 5.0µV°C ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation (One side) 250mW Continuous Power Dissipation (Both sides) 500mW Linear Derating factor (One side) 2.3mW/°C Linear Derating factor (Both sides) 4.3mW/°C Maximum Currents Collector Current 10mA MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ ‐‐ 2 mV IC = 10µA, VCE = 5V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ ‐‐ 5 µV/°C IC = 10µA, VCE = 5V TA = ‐55°C to +125°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 5 nA IC = 10µA, VCE = 5V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage 45 ‐‐ ‐‐ V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage 45 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 2 BVCCO Collector to Collector Voltage 60 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 200 ‐‐ ‐‐ IC = 10µA, VCE = 5V 225 ‐‐ ‐‐ IC = 1.0mA, VCE = 5V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ 0.5 V IC = 0.5mA, IB = 0.05mA IEBO Emitter Cutoff Current ‐‐ ‐‐ 1 nA IC = 0, VEB = 3V ICBO Collector Cutoff Current ‐‐ ‐‐ 1 nA IE = 0, VCB = 45V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0, VCB = 5V CC1C2 Collector to Collector Capacitance ‐‐ ‐‐ 2 pF VCC = 0V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ 10 nA VCC = ±60V fT Current Gain Bandwidth Product 220 ‐‐ ‐‐ MHz IC = 1mA, VCE = 5V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS120 MONOLITHIC DUAL NPN TRANSISTOR LS120 Features: High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance The LS120 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS120 is a direct replacement for discontinued Intersil IT120. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Linear Systems replaces discontinued Intersil IT120 Available Packages: LS120 in P-DIP LS120 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx P-DIP (Top View) |
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