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J112 bảng dữ liệu(PDF) 1 Page - Micross Components

tên linh kiện J112
Giải thích chi tiết về linh kiện  Linear Systems replaces discontinued Siliconix J112
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nhà sản xuất  MICROSS [Micross Components]
Trang chủ  http://www.micross.com
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J112 bảng dữ liệu(HTML) 1 Page - Micross Components

  J112 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J112 
LOW GATE LEAKAGE CURRENT 
5pA 
FAST SWITCHING 
t(on) ≤ 4ns 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐55°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
360mW 
MAXIMUM CURRENT
Gate Current (Note 1) 
50mA 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
VGDS = ‐35V 
Gate to Source Voltage 
VGSS = ‐35V 
  
J112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐35 
‐‐ 
‐‐ 
 
 
I= 1µA,   VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐1 
‐‐ 
‐5 
VDS = 5V, ID = 1µA 
VGS(F) 
Gate to Source Forward Voltage 
‐‐ 
0.7 
‐‐ 
I= 1mA,   VDS = 0V 
IDSS 
Drain to Source Saturation Current (Note 2) 
‐‐ 
‐‐ 
mA 
VDS = 15V, VGS = 0V 
IGSS 
Gate Reverse Current 
‐‐ 
‐0.005 ‐1 
nA 
VGS = ‐15V,  VDS = 0V 
IG 
Gate Operating Current 
‐‐ 
‐0.5 
‐‐ 
pA 
VDG = 15V,  ID = 10mA 
ID(off) 
Drain Cutoff Current 
‐‐ 
 0.005 
nA 
VDS = 5V, VGS = ‐10V 
rDS(on) 
Drain to Source On Resistance 
‐‐ 
‐‐ 
50 Ω 
IG = 1mA,  VDS = 0V 
 
 
    
 
J112 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
gfs 
Forward Transconductance 
‐‐ 
‐‐ 
mS 
VDS = 20V,  ID = 1mA , f = 1kHz 
gos 
Output Conductance 
‐‐ 
25 
‐‐ 
µS 
rDS(on) 
Drain to Source On Resistance 
‐‐ 
‐‐ 
50 Ω 
VGS = 0V, ID = 0mA,  f = 1kHz 
Ciss 
Input Capacitance 
‐‐ 
12 
pF 
VDS = 0V, VGS = ‐10V, f = 1MHz 
 
Crss 
Reverse Transfer Capacitance 
‐‐ 
en 
Equivalent Noise Voltage 
‐‐ 
‐‐ 
nV/√Hz 
VDG = 10V,  ID = 1mA , f = 1kHz 
 
 
    
 
J112 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC  
UNITS 
CONDITIONS 
td(on) 
Turn On Time 
2  
 
ns 
VDD = 10V 
VGS(H) = 0V 
 
See Switching Circuit 
tr 
Turn On Rise Time 
td(off) 
Turn Off Time 
tf 
Turn Off Fall Time 
15 
                                                                                                                 
J112 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
VGS(L) ‐7V  
RL 
1600Ω 
 
ID(on) 
6mA  
  
 
  
 
  
 
  
 
  
 
J112
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J112
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J112 Applications:
Analog Switches
Commutators
Choppers
J112 Benefits:
Short Sample & Hold Aperture Time
Low insertion loss
Low Noise
Micross Components Europe
Available Packages:
J112 in TO-92
J112 in bare die.
Please contact Micross for full
package and die dimensions
Note 1 ‐ Absolute maximum ratings are limiting values above which J112 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
SWITCHING TEST CIRCUIT
TO-92 (Bottom View)


Số phần tương tự - J112

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