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J112 bảng dữ liệu(PDF) 1 Page - Micross Components |
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J112 bảng dữ liệu(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES DIRECT REPLACEMENT FOR SILICONIX J112 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 360mW MAXIMUM CURRENT Gate Current (Note 1) 50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = ‐35V Gate to Source Voltage VGSS = ‐35V J112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐35 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐5 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 5 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐0.005 ‐1 nA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐0.5 ‐‐ pA VDG = 15V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 0.005 1 nA VDS = 5V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω IG = 1mA, VDS = 0V J112 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 6 ‐‐ mS VDS = 20V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 25 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω VGS = 0V, ID = 0mA, f = 1kHz Ciss Input Capacitance ‐‐ 7 12 pF VDS = 0V, VGS = ‐10V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 3 5 en Equivalent Noise Voltage ‐‐ 3 ‐‐ nV/√Hz VDG = 10V, ID = 1mA , f = 1kHz J112 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 2 ns VDD = 10V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 J112 SWITCHING CIRCUIT PARAMETERS VGS(L) ‐7V RL 1600Ω ID(on) 6mA J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). J112 Applications: Analog Switches Commutators Choppers J112 Benefits: Short Sample & Hold Aperture Time Low insertion loss Low Noise Micross Components Europe Available Packages: J112 in TO-92 J112 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which J112 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SWITCHING TEST CIRCUIT TO-92 (Bottom View) |
Số phần tương tự - J112 |
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Mô tả tương tự - J112 |
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