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3 - 3

MCC 200

MCD 200

IXYS reserves the right to change limits, test conditions and dimensions

T

C

t

110

0

25

50

75

100

125

150

0

100

200

300

400

I

TSM

I

FSM

A

A

C

I

TAVM

I

FAVM

s

T

ms

t

s

t

Z

thJC

K/W

T

0.001

0.01

0.1

1

0

2000

4000

6000

8000

80 % V

RRM

T

50 Hz

T

180° sin

120°

60°

30°

DC

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0

25

50

75

100

125

150

0

200

400

600

0

300

600

900

1200

1500

1800

2100

W

P

tot

A

I

dAVM

T

A

C

0

25

50

75

100

125

150

0

100

200

300

0

100

200

300

400

W

P

tot

A

I

T

A

C

R

0.1

0.2

0.3

0.4

0.6

0.8

1.0

180° sin

120°

60°

30°

DC

Circuit

B6

0.03

0.04

0.06

0.08

0.1

0.15

0.2

R

120°

180°

DC

60°

30°

Fig. 7

Power dissipation versus on-state current and

ambient temperature (per thyristor or diode)

Fig. 4 Surge overload current

I

Fig. 5

Fig. 6

Maximum forward current

at case temperature

Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)

Constants for Z

iR

t

1

0.01

0.00014

2

0.0065

0.019

3

0.025

0.18

4

0.0615

0.52

5

0.027

1.6

Fig. 8

3

direct output current and ambient temperature