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FQD1P50TF bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FQD1P50TF bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  ©2009 Fairchild Semiconductor Corporation Rev. B3, January 2009 FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. Features • -1.2A, -500V, RDS(on) = 10.5Ω @VGS = -10 V • Low gate charge ( typical 11 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) Symbol Parameter FQD1P50 / FQU1P50 Units VDSS Drain-Source Voltage -500 V ID Drain Current - Continuous (TC = 25°C) -1.2 A - Continuous (TC = 100°C) -0.76 A IDM Drain Current - Pulsed (Note 1) -4.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 110 mJ IAR Avalanche Current (Note 1) -1.2 A EAR Repetitive Avalanche Energy (Note 1) 3.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 38 W - Derate above 25°C 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 3.29 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G I-PAK FQU Series D-PAK FQD Series GS D GS D January 2009 QFET ® • RoHS Compliant |
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