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SM6T100A bảng dữ liệu(PDF) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS RATINGS at (TA=25ºC unless otherwise noted)
SM6T6V8A
KE7
KE7
5.80
1000
6.45
7.14
10
10.5
57.0
13.4
298
5.7
SM6T7V5A
KK7
AK7
6.40
500
7.13
7.88
10
11.3
53.0
14.5
276
6.1
SM6T10A
KT7
AT7
8.55
10.0
9.50
10.5
1.0
14.5
41.0
18.6
215
7.3
SM6T12A
KX7
AX7
10.2
5.00
11.4
12.6
1.0
16.7
36.0
21.7
184
7.8
SM6T15A
LG7
LG7
12.8
1.00
14.3
15.8
1.0
21.2
28.0
27.2
147
8.4
SM6T18A
LM7
BM7
15.3
1.00
17.1
18.9
1.0
25.2
24
32.5
123
8.8
SM6T22A
LT7
BT7
18.8
1.00
20.9
23.1
1.0
30.6
20.0
39.3
102
9.2
SM6T24A
LV7
LV7
20.5
1.00
22.8
25.2
1.0
33.2
18.0
42.8
93
9.4
SM6T27A
LX7
BX7
23.1
1.00
25.7
28.4
1.0
37.5
16.0
48.3
83
9.6
SM6T30A
ME7
CE7
25.6
1.00
28.5
31.5
1.0
41.5
14.5
53.5
75
9.7
SM6T33A
MG7
MG7
28.2
1.00
31.4
34.7
1.0
45.7
13.1
59.0
68
9.8
SM6T36A
MK7
CK7
30.8
1.00
34.2
37.8
1.0
49.9
12.0
64.3
62
9.9
SM6T39A
MM7
CM7
33.3
1.00
37.1
41.0
1.0
53.9
11.1
69.7
57
10.0
SM6T68A
NG7
NG7
58.1
1.00
64.6
71.4
1.0
92.0
6.50
121
33
10.4
SM6T100A
NV7
NV7
85.5
1.00
95.0
105
1.0
137
4.40
178
22.5
10.6
SM6T150A
PK7
PK7
128
1.00
143
158
1.0
207
2.90
265
15
10.8
SM6T200A
PR7
PR7
171
1.00
190
210
1.0
274
2.20
353
11.3
10.8
SM6T220A
PR8
PR8
188
1.00
209
231
1.0
328
2.00
388
10.3
10.8
NOTES:
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of VBR
(2) VBR measured after IT applied for 300µs square wave pulse
(3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled
APPLICATION NOTES
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current
within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.
RECOMMENDED PAD SIZES
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for
soldering methods.
0.90 (2.28)
0.025 (2.16)
0.070 (1.78)
Type(1)
Device Marking Code
Uni
Bi
Standoff
Voltage
VRM
(Volts)
Leakage
Current(3)
IRM @ VRM
(
µA)
Breakdown Voltage
VBR @ IT
(2)
(Volts)
Min
Max
Test
Current
IT
(mA)
Clamping Voltage
VC @ IPP
10/1000
µs
(Volts)
(Amps)
α
T
Max
10-4/
°C
Clamping Voltage
VC @ IPP
8/20
µs
(Volts)
(Amps)


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