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Giải thích chi tiết về linh kiện  N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
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STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical ratings
Doc ID 023500 Rev 1
3/20
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
IPAK
VDS
Drain-source voltage
600
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
2
2 (1)
1.
Limited by package
2A
ID
Drain current (continuous) at TC = 100 °C
1.26
1.26 (1)
1.26
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
8
8 (1)
8A
PTOT
Total dissipation at TC = 25 °C
45
20
45
W
Derating factor
0.36
0.16
0.36
W/°C
VESD(G-S)
Gate source ESD
(HBM-C = 100 pF, R = 1.5 k
Ω)
2500
V
dv/dt (3)
3.
ISD ≤ 2 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
IPAK
Rthj-case Thermal resistance junction-case max
2.78
6.25
2.78
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W
Rthj-amb Thermal resistance junction-amb max
62.5
100
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
80
mJ


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