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BAT85 bảng dữ liệu(PDF) 1 Page - General Semiconductor |
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BAT85 bảng dữ liệu(HTML) 1 Page - General Semiconductor |
1 / 2 page FEATURES Schottky Diodes MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified DO-35 max. ∅ Cathode .020 (0.52) Mark max. ∅.079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g 4/98 BAT85 Symbol Value Unit Continuous Reverse Voltage VR 30 V Forward Continuous Current at Tamb = 25 °C IF 2001) mA Peak Forward Current at Tamb = 25 °C IFM 3001) mA Surge Forward Current at tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation at Tamb = 65 °C Ptot 2001) mW Junction Temperature Tj 125 °C Ambient Operating Temperature Range Tamb –65 to +125 °C Storage Temperature Range TS –65 to +150 °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. For general purpose applications. This diode features low turn-on volt- age. The devices are protected by a PN junction guard ring against excessive volt- age, such as electrostatic discharges. This diode is also available in the MiniMELF case with type designation BAS85. ♦ ♦ ♦ |
Số phần tương tự - BAT85 |
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Mô tả tương tự - BAT85 |
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