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TS3A5017DGVRE4 bảng dữ liệu(PDF) 11 Page - Texas Instruments

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TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D – JANUARY 2005 – REVISED DECEMBER 2008
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VD
Voltage at D
VNC
Voltage at S
ron
Resistance between D and S ports when the channel is ON
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
IS(OFF)
Leakage current measured at the S port, with the corresponding channel (S to D) in the OFF state
ISPWR(OFF)
Leakage current measured at the S port under the powered down mode, V+ = 0
IS(ON)
Leakage current measured at the S port, with the corresponding channel (S to D) in the ON state and the output (D) open
ID(OFF)
Leakage current measured at the D port, with the corresponding channel (D to S) in the OFF state
IDPWR(OFF)
Leakage current measured at the D port under the powered down mode, V+ = 0
ID(ON)
Leakage current measured at the D port, with the corresponding channel (D to S) in the ON state and the output (S) open
VIH
Minimum input voltage for logic high for the control input (IN, EN)
VIL
Maximum input voltage for logic low for the control input (IN, EN)
VI
Voltage at the control input (IN, EN)
IIH, IIL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tON
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tOFF
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning OFF.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (S or D) output.
QC
This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge
injection, QC = CL × ΔVD, CL is the load capacitance and ΔVD is the change in analog output voltage.
CS(OFF)
Capacitance at the S port when the corresponding channel (S to D) is OFF
CS(ON)
Capacitance at the S port when the corresponding channel (S to D) is ON
CD(OFF)
Capacitance at the D port when the corresponding channel (D to S) is OFF
CD(ON)
Capacitance at the D port when the corresponding channel (D to S) is ON
CI
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
OISO
frequency, with the corresponding channel (S to D) in the OFF state.
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (1S1 to 2S1). This is
XTALK
measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
THD
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
Copyright © 2005–2008, Texas Instruments Incorporated
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