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STL8DN6LF3 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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STL8DN6LF3 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. February 2014 DocID022261 Rev 5 1/18 STL8DN6LF3 Automotive-grade dual N-channel 60 V, 22.5 m Ω typ., 7.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Logic level V GS(th) • 175 °C junction temperature • 100% avalanche rated • Wettable flank package Applications • Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. PowerFLAT™ 5x6 1 2 3 4 double island Order code VDS RDS(on) max ID STL8DN6LF3 60 V 30 m Ω 7.8 A Table 1. Device summary Order code Marking Packages(1) Packaging STL8DN6LF3 8DN6LF3 PowerFLAT™ 5x6 double island Tape and reel 1. For wettable flank option, please contact ST sale offices www.st.com |
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