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LM20242 bảng dữ liệu(PDF) 3 Page - Texas Instruments

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LM20242 bảng dữ liệu(HTML) 3 Page - Texas Instruments

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LM20242
www.ti.com
SNVS534D – OCTOBER 2007 – REVISED MAY 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)
VIN to GND
-0.3V to +38V
BOOT to GND
-0.3V to +43V
BOOT to SW
-0.3V to +7V
SW to GND
-0.5V to +38V
SW to GND (Transient)
-1.5V (< 20 ns)
FB, EN, SS/TRK, PGOOD to GND
-0.3V to +6V
VCC to GND
-0.3V to +8V
Storage Temperature
-65°C to 150°C
ESD Rating
Human Body Model (2)
2kV
(1)
Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2)
The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor to each pin.
OPERATING RATINGS
VIN to GND
+4.5V to +36V
Junction Temperature
−40°C to + 125°C
ELECTRICAL CHARACTERISTICS
Unless otherwise stated, the following conditions apply: VVIN = 12V. Limits in standard type are for TJ = 25°C only, limits in
bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are
specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C,
and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VFB
Feedback pin voltage
VVIN = 4.5V to 36V
0.788
0.8
0.812
V
VCOMP = 500 mV to 700 mV
RHSW-DS(ON)
High-Side MOSFET On-Resistance
ISW = 200 mA
130
225
m
RLSW-DS(ON)
Low-Side MOSFET On-Resistance
ISW = 200 mA
110
190
m
IQ
Operating Quiescent Current
VVIN = 4.5V to 36V
2
3
mA
ISD
Shutdown Quiescent current
VEN = 0V
150
180
µA
VUVLO
VIN Under Voltage Lockout
Rising VVIN
3.65
3.9
4.2
V
VUVLO(HYS)
VIN Under Voltage Lockout Hysteresis
200
400
mV
VVCC
VCC Voltage
IVCC = -5 mA, VEN = 5V
5.5
V
ISS
Soft-Start Pin Source Current
VSS = 0V
3
5
7
µA
IBOOT
BOOT Diode Leakage
VBOOT = 4V
10
nA
VF-BOOT
BOOT Diode Forward Voltage
IBOOT = -100 mA
0.9
1.1
V
Powergood
VFB(OVP)
Over Voltage Protection Rising Threshold
VFB(OVP) / VFB
107
110
112
%
VFB(OVP-HYS)
Over Voltage Protection Hysteresis
ΔVFB(OVP) / VFB
2
3
%
VFB(PG)
PGOOD Rising Threshold
VFB(PG) / VFB
93
95
97
%
VFB(PG-HYS)
PGOOD Hysteresis
ΔVFB(PG) / VFB
2
3
%
TPGOOD
PGOOD delay
20
µs
IPGOOD(SNK)
PGOOD Low Sink Current
VPGOOD = 0.5V
0.6
1
mA
IPGOOD(SRC)
PGOOD High Leakage Current
VPGOOD = 5V
5
200
nA
Copyright © 2007–2008, Texas Instruments Incorporated
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