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LM4666 bảng dữ liệu(PDF) 11 Page - Texas Instruments

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LM4666, LM4666SDBD
www.ti.com
SNAS189 – MAY 2004
The rising and falling edges are necessarily short in relation to the minimum pulse width (160ns), having
approximately 2ns rise and fall times, typical, depending on parasitic output capacitance. The inductive nature of
the transducer load can also result in overshoot on one or both edges, clamped by the parasitic diodes to GND
and VDD in each case. From an EMI standpoint, this is an aggressive waveform that can radiate or conduct to
other components in the system and cause interference. It is essential to keep the power and output traces short
and well shielded if possible. Use of ground planes, beads, and micro-strip layout techniques are all useful in
preventing unwanted interference.
As the distance from the LM4666 and the speakers increase the amount of EMI radiation will increase since the
output wires or traces acting as antenna become more efficient with length. What is acceptable EMI is highly
application specific. Ferrite chip inductors placed close to the LM4666 may be needed to reduce EMI radiation.
The value of the ferrite chip is very application specific.
POWER SUPPLY BYPASSING
As with any power amplifier, proper supply bypassing is critical for low noise performance and high power supply
rejection ratio (PSRR). The capacitor (CS) location should be as close as possible to the LM4666. Typical
applications employ a voltage regulator with a 10µF and a 0.1µF bypass capacitors that increase supply stability.
These capacitors do not eliminate the need for bypassing on the supply pin of the LM4666. A 1µF tantalum
capacitor is recommended.
SHUTDOWN FUNCTION
In order to reduce power consumption while not in use, the LM4666 contains shutdown circuitry that reduces
current draw to less than 0.01µA. The trigger point for shutdown is shown as a typical value in the Electrical
Characteristics Tables and in the Shutdown Hysteresis Voltage graphs found in the Typical Performance
Characteristics section. It is best to switch between ground and supply for minimum current usage while in the
shutdown state. While the LM4666 may be disabled with shutdown voltages in between ground and supply, the
idle current will be greater than the typical value. Increased THD may also be observed with voltages less than
VDD on the Shutdown pin when in PLAY mode.
The LM4666 has an internal resistor connected between GND and Shutdown pins. The purpose of this resistor is
to eliminate any unwanted state changes when the Shutdown pin is floating. The LM4666 will enter the shutdown
state when the Shutdown pin is left floating or if not floating, when the shutdown voltage has crossed the
threshold. To minimize the supply current while in the shutdown state, the Shutdown pin should be driven to
GND or left floating. If the Shutdown pin is not driven to GND, the amount of additional resistor current due to the
internal shutdown resistor can be found by Equation 1 below.
(VSD - GND) / 60kΩ
(1)
With only a 0.5V difference, an additional 8.3µA of current will be drawn while in the shutdown state.
GAIN SELECTION FUNCTION
The LM4666 has fixed selectable gain to minimize external components, increase flexibility and simplify design.
For a differential gain of 6dB, the Gain Select pin should be permanently connected to VDD or driven to a logic
high level. For a differential gain of 12dB, the Gain Select pin should be permanently connected to GND or driven
to a logic low level. The gain of the LM4666 can be switched while the amplifier is in PLAY mode driving a load
with a signal without damage to the IC. The voltage on the Gain Select pin should be switched quickly between
GND (logic low) and VDD (logic high) to eliminate any possible audible artifacts from appearing at the output. For
typical threshold voltages for the Gain Select function, refer to the Gain Threshold Voltages graph in the Typical
Performance Characteristics section.
Copyright © 2004, Texas Instruments Incorporated
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