STPSC8H065D datasheet(1/14 Pages) STMICROELECTRONICS

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This is information on a product in full production.

January 2014

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STPSC8H065

650 V power Schottky silicon carbide diode

Datasheet

− production data

Features

• No reverse recovery charge in application

current range

• Switching behavior independent of

temperature

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V rms

– Typical package capacitance: 7 pF

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

K

A

K

A

NC

K

A

K

A

TO-220AC

STPSC H065D

8

TO-220AC Ins

STPSC H065D

8I

DPAK

STPSC H065B-TR

8

DPAK

2

STPSC H065 -TR

8G

Table 1. Device summary

Symbol

Value

IF(AV)

8 A

VRRM

650 V

Tj (max)

175 °C

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