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STP110N55F6 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 55 V, 4.3 m, 110 A TO-220 STripFET VI DeepGATE Power MOSFET
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Electrical characteristics
STP110N55F6
4/11
Doc ID 019059 Rev 1
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0)
ID = 250 µA
55
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = max rating
1
µA
VDS = max rating,TC=125 °C
100
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 60 A
4.3
5.2
m
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
8350
pF
Coss
Output capacitance
-
460
-
pF
Crss
Reverse transfer
capacitance
344
pF
Qg
Total gate charge
VDD = 44 V, ID = 110 A,
VGS = 10 V
(see Figure 3)
120
nC
Qgs
Gate-source charge
-
TBD
-
nC
Qgd
Gate-drain charge
TBD
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 44 V, ID = 55 A
RG =4.7 Ω VGS = 10 V
(see Figure 2)
-
TBD
TBD
-
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
-
TBD
TBD
-
ns
ns


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