Electrical characteristics

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3

4/21

Doc ID 18206 Rev 2

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

525

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 525 V

V

DS

= 525 V, T

C

=125 °C

1

50

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 20 V

± 10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 50 μA

3

3.75

4.5

V

R

DS(on

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 1.25 A

2.1

2.6

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

C

oss

C

rss

Input capacitance

Output capacitance

Reverse transfer

capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-

334

28

5

-

pF

pF

pF

C

oss(eq)

(1)

1.

C

oss eq

. is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

.

Equivalent output

capacitance time

related

V

DS

= 0 to 420 V, V

GS

= 0

-

20

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

4

-

Ω

Q

g

Q

gs

Q

gd

Total gate charge

Gate-source charge

Gate-drain charge

V

DD

= 400 V, I

D

= 2.5 A,

V

GS

= 10 V

(see

Figure 19)

-

11

2

7

-

nC

nC

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

t

d(on)

t

r

t

d(off)

t

f

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

V

DD

= 260 V, I

D

= 1.25 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 18)

-

8

7

21

14

-

ns

ns

ns

ns