BC414B datasheet(1/5 Pages) CDIL

tên linh kiện	BC414B

Giải thích chi tiết về linh kiện	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BC413, B, C

BC414, B, C

TO-92

Plastic Package

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

UNITS

Collector Emitter Voltage

VCEO

V

Collector Base Voltage

VCBO

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

mA

Power Dissipation at Ta=25ºC

PD

mW

Derate Above 25ºC

mW/ºC

Power Dissipation at Tc=25ºC

PD

W

Derate Above 25ºC

mW/ºC

Operating and Storage Junction

Temperature Range

TJ, Tstg

ºC

THERMAL RESISTANCE

Junction to Case

Rth (j-c)

ºC/W

Junction to Ambient in free air

Rth (j-a)

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

BC413

BC414

UNITS

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

>30

>45

V

Collector Base Voltage

VCBO

IC=10µA, IE=0

>45

>50

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

V

Collector Cut Off Current

ICBO

VCB=30V, IE=0

nA

VCB=30V, IE=0, Ta= +125ºC

µA

Emitter Cut Off Voltage

IEBO

VEB=4V, IC=0,

nA

DC Current Gain

hFE

IC=10µA, VCE=5V, BC413/414

IC=2mA, VCE=5V

BC413B/414C

BC413C/414C

BC413/414

Collector Emitter Saturation Voltage

VCE (sat)

IC=10mA, IB=0.5mA

V

IC=10mA, IB=see *

V

**IC=100mA, IB=5mA

V

Base Emitter Saturation Voltage

VBE (sat)

**IC=100mA, IB=5mA

V

Base Emitter On Voltage

VBE (on)

IC=10µA, VCE=5V

V

IC=100µA, VCE=5V

V

IC=2mA, VCE=5V

V

*IB is Value for Which IC=11mA at VCE=1V

**Pulse test:- Pulse Width =300

µµs, Duty Cycle 2%

BC413_414Rev060706E

5.0

357

100

1.0

2.8

350

125

8.0

- 55 to +150

<15

TYP0.55

0.55 - 0.75

BC413

BC414

30

45

50

380 - 800

180 - 800

>5.0

TYP0.52

<0.25

<0.6

<5.0

>100

180 - 460

TYP1.1

<0.6

C B

E

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Số phần tương tự - BC414B

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