BCW68H datasheet(2/3 Pages) CDIL

tên linh kiện	BCW68H

Giải thích chi tiết về linh kiện	GENERAL PURPOSE TRANSISTOR

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Continental Device India Limited

Data Sheet

Page 2 of 3

min.

250

BCW67C, 68H

hFE

max.

630

IC = 300 mA; VCE = 1 V

BCW67A, 68F

hFE

min.

35

BCW67B, 68G

hFE

min.

60

BCW67C, 68H

hFE

min.

100

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

–VCBO

max.

45

60 V

Collector–emitter voltage (open base)

–VCEO

max.

32

45 V

Emitter–base voltage (open collector)

–VEBO

max.

5

V

Collector current (d.c.)

–I C

max.

800

mA

Total power dissipation at Tamb = 25°C

Ptot

max

225

mW

Storage temperature

Tstg

–55 to +150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

556

°C/mW

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

BCW67 series

68 series

IC = 10 mA; IB = 0

V(BR)CEO min.

32

45 V

IC = 10 mA; VEB = 0

V(BR)CES min.

45

60 V

Emitter–base breakdown voltage

IE = 10 mA; IC = 0

V(BR)EBO min.

5

V

Collector cut–off current

VCE = 32 V; IE = 0 V

ICES

max.

20

–

nA

VCE = 45 V; IE = 0 V

ICES

max.

–

20 nA

VCE = 32 V; IE = 0 V; TA = 150°C

ICES

max.

10

–

m

A

VCE = 45 V; IE = 0 V; TA = 150°C

ICES

max.

–

10 mA

Emitter cut–off current

VEB = 4 V; IC =0

IEBO

max.

20

nA

Output capacitance at f = 1 MHz

IE = 0; VCB = 10 V

Cc

max.

18

pF

Input capacitance at f = 1 MHz

IC = 0; VEB = 0.5 V

Ce

max.

105

pF

Saturation voltages

IC = 300 mA; IB = 30 mA

VCEsat

max.

1.5

V

IC = 500 mA; IB = 50 mA

–VBEsat

max.

2

V

Noise figure at RS = 1 kW

IC = 0.2 mA; VCE = 5 V

f = 1 KHz, BW = 200 Hz

NF

max.

10

dB

Transition frequency at f = 100 MHz

IC = 20 mA; VCE = 10 V

fT

min.

100

MHz

BCW67, A, B, C

BCW68, F, G, H

Số phần tương tự - BCW68H

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