BD135 datasheet(1/4 Pages) CDIL

tên linh kiện	BD135

Giải thích chi tiết về linh kiện	NPN EPITAXIAL SILICON POWER TRANSISTORS

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NPN EPITAXIAL SILICON POWER TRANSISTORS

BD135 BD137

BD139

TO126

Plastic Package

Designed for use as Audio Amplifier and Drivers Utilizing

Complementary BD136, BD138, BD140

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BD135

BD137

UNIT

Collector -Emitter Voltage

VCEO

45

60

V

Collector -Emitter Voltage (RBE=1kΩ

Ω)

VCER

45

60

V

Collector -Base Voltage

VCBO

45

60

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

1.5

A

Collector Peak Current

ICM

2.0

A

Base Current

IB

0.5

A

Power Dissipation @ Ta=25ºC

PD

1.25

W

Derate above 25ºC

10

mW/ºC

Power Dissipation @ Tc=25ºC

PD

12.5

W

Derate above 25ºC

100

mW/ºC

Power Dissipation @ Tc=70ºC

PD

8.0

W

Operating And Storage Junction

Temperature Range

Tj, Tstg

- 55 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

Rth (j-a)

ºC/W

Junction to Case

Rth (j-c)

ºC/W

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MAX

UNIT

Collector Emitter Sustaining Voltage

*VCEO (sus)

IC=30mA, IB=0

BD135

V

BD137

V

BD139

V

Collector Cut off Current

ICBO

VCB=30V, IE=0

0.1

µA

VCB=30V, IE=0,

Tc=125ºC

10

µA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

10

µA

DC Current Gain

*hFE

IC=0.005A, VCE=2V

IC=0.15A, VCE=2V

250

IC=0.5A, VCE=2V

*Pulse test:- Pulse width=300

µµs, duty cycle=2%

100

10

MIN

45

60

80

BD139

80

100

25

40

25

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Số phần tương tự - BD135

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