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FQPF8N60C bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

tên linh kiện FQPF8N60C
Giải thích chi tiết về linh kiện  N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF8N60C bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
©2004 Fairchild Semiconductor Corporation
FQPF8N60C Rev. C0
www.fairchildsemi.com
2

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 7.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
Packing Method
FQPF8N60C
FQPF8N60C
TO-220F
N/A
N/A
50 units
Tube
Electrical Characteristics T
C = 25
oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.75 A
--
1.0
1.2
gFS
Forward Transconductance
VDS = 40 V, ID = 3.75 A
--
8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
965
1255
pF
Coss
Output Capacitance
--
105
135
pF
Crss
Reverse Transfer Capacitance
--
12
16
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 7.5 A,
RG = 25 Ω
(Note 4)
--
16.5
45
ns
tr
Turn-On Rise Time
--
60.5
130
ns
td(off)
Turn-Off Delay Time
--
81
170
ns
tf
Turn-Off Fall Time
--
64.5
140
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 7.5 A,
VGS = 10 V
(Note 4)
--
28
36
nC
Qgs
Gate-Source Charge
--
4.5
--
nC
Qgd
Gate-Drain Charge
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 7.5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/µs
--
365
--
ns
Qrr
Reverse Recovery Charge
--
3.4
--
µC


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