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FQPF8N60C bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FQPF8N60C bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity ©2004 Fairchild Semiconductor Corporation FQPF8N60C Rev. C0 www.fairchildsemi.com 2 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. Packing Method FQPF8N60C FQPF8N60C TO-220F N/A N/A 50 units Tube Electrical Characteristics T C = 25 oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.75 A -- 8.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 965 1255 pF Coss Output Capacitance -- 105 135 pF Crss Reverse Transfer Capacitance -- 12 16 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 7.5 A, RG = 25 Ω (Note 4) -- 16.5 45 ns tr Turn-On Rise Time -- 60.5 130 ns td(off) Turn-Off Delay Time -- 81 170 ns tf Turn-Off Fall Time -- 64.5 140 ns Qg Total Gate Charge VDS = 480 V, ID = 7.5 A, VGS = 10 V (Note 4) -- 28 36 nC Qgs Gate-Source Charge -- 4.5 -- nC Qgd Gate-Drain Charge -- 12 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs -- 365 -- ns Qrr Reverse Recovery Charge -- 3.4 -- µC |
Số phần tương tự - FQPF8N60C |
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Mô tả tương tự - FQPF8N60C |
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