công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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MJ15003 bảng dữ liệu(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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MJ15003 bảng dữ liệu(HTML) 3 Page - Nell Semiconductor Co., Ltd |
3 / 4 page Fig.2 Active region safe operating area 20 10 5 2 1 0.7 0.5 0.2 V , Collector-emitter voltage ( V) CE There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate l -V C CE limits of the transistor that must be observed for reliable operation; i.e., the must not be subjected to transistor The data of fig.2 is based on T = 200°C; T is variable J(pk) C depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2.0 1.6 1.2 0.8 0.4 0 500 300 200 100 70 50 30 20 10 7 5 20 200 100 70 50 20 10 0.2 0.3 0.5 1 2 5 7 10 l , Collector current (Amp) C Collector current, l (Amp) C Fig.3 DC Current gain MJ15003(NPN) MJ15004(PNP) l , Collector current (Amp) C Fig.4 “ON” Characteristics MJ15003(NPN) MJ15004(PNP) SEMICONDUCTOR RoHS RoHS Nell High Power Products MJ15004(PNP) MJ15003(NPN) 7 15 0.3 3 2 3 5 7 10 20 30 50 70 100 150 200 T = 200 °C J T = 25 °C C Thermal limitation (single pulse) Bonding wire limited Second breakdown limited curves apply below rated VCEO greater dissipation than the curves indicate. V = 2.0V CE T = 100 °C J T = 25 °C J 10 7 5 2 1 0.5 0.2 0.3 V = 2.0V CE T = 100 °C J T = 25 °C J 7 5 300 20 20 10 7 5 2 1 0.5 0.2 0.3 V @ = 2V BE VCE T = 25 °C J T = 100 °C J V @ l = 10 CE(sat) /l C B T = 25 °C J T = 100 °C J 2.0 1.6 1.2 0.8 0.4 0 0.2 0.3 0.5 1 2 5 7 10 20 V @ = 2V BE VCE T = 25 °C J T = 100 °C J T = 25 °C J T = 100 °C J V @ l = 10 CE(sat) /l C B Collector current, l (Amp) C Page 3 of 4 www.nellsemi.com |
Số phần tương tự - MJ15003 |
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Mô tả tương tự - MJ15003 |
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