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1 / 12 page 07/06/10 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET S D G VDSS = 60V RDS(on) = 8.5mΩ ID = 75A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D2Pak IRF1010EZSPbF TO-220AB IRF1010EZPbF TO-262 IRF1010EZLPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.11 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 Max. 84 60 340 75 10 lbf•in (1.1N•m) 140 0.90 ± 20 99 180 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 PD - 95483C |
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