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STP57N65M5 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical ratings
Doc ID 022849 Rev 4
3/22
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,
D²PAK, I²PAK
TO-220FP
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
42
42 (1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
26.5
26.5 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
168
168 (1)
A
PTOT
Total dissipation at TC = 25 °C
250
40
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
11
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
960
mJ
dv/dt (3)
3.
ISD ≤ 42 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case max
0.50
3.1
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
30
°C/W


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