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ADR550 bảng dữ liệu(PDF) 9 Page - Analog Devices

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ADR550 bảng dữ liệu(HTML) 9 Page - Analog Devices

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ADR525/ADR530/ADR550
Rev. F | Page 9 of 12
THEORY OF OPERATION
The ADR525/ADR530/ADR550 use the band gap concept to
produce a stable, low temperature coefficient voltage reference
suitable for high accuracy data acquisition components and
systems. The devices use the physical nature of a silicon transistor
base-emitter voltage (VBE) in the forward-biased operating region.
All such transistors have approximately a −2 mV/°C tempera-
ture coefficient (TC), making them unsuitable for direct use as
low temperature coefficient references. Extrapolation of the
temperature characteristics of any one of these devices to
absolute zero (with the collector current proportional to the
absolute temperature), however, reveals that its VBE approaches
approximately the silicon band gap voltage. Thus, if a voltage
develops with an opposing temperature coefficient to sum the
VBE, a zero temperature coefficient reference results. The
ADR525/ADR530/ADR550 circuit shown in Figure 14 provides
such a compensating voltage (V1) by driving two transistors at
different current densities and amplifying the resultant VBE
difference (ΔVBE, which has a positive temperature coefficient).
The sum of VBE and V1 provides a stable voltage reference over
temperature.
VBE
+
VBE
+
V1
V–
V+
+
Figure 14. Circuit Schematic
APPLICATIONS
The ADR525/ADR530/ADR550 are a series of precision shunt
voltage references. They are designed to operate without an
external capacitor between the positive and negative terminals.
If a bypass capacitor is used to filter the supply, the references
remain stable.
All shunt voltage references require an external bias resistor (RBIAS)
between the supply voltage and the reference (see Figure 15).
RBIAS sets the current that flows through the load (IL) and the
reference (IIN). Because the load and the supply voltage can vary,
RBIAS needs to be chosen based on the following considerations:
RBIAS must be small enough to supply the minimum IIN
current to the ADR525/ADR530/ADR550, even when the
supply voltage is at its minimum value and the load current
is at its maximum value.
RBIAS must be large enough so that IIN does not exceed
15 mA when the supply voltage is at its maximum value
and the load current is at its minimum value.
VOUT
VS
ADR550
IL
IIN
R
IIN + IL
Figure 15. Shunt Reference
Given these conditions, RBIAS is determined by the supply
voltage (VS), the load and operating currents (IL and IIN) of
the ADR525/ADR530/ADR550, and the output voltage (VOUT)
of the ADR525/ADR530/ADR550.
IN
L
OUT
S
BIAS
I
I
V
V
R
+
=
(3)
Precision Negative Voltage Reference
The ADR525/ADR530/ADR550 are suitable for applications
where a precise negative voltage is desired. Figure 16 shows the
ADR525 configured to provide a negative output.
VS
–2.5V
ADR525
R
Figure 16. Negative Precision Reference Configuration
Output Voltage Trim
The trim terminal of the ADR525/ADR530/ADR550 can be
used to adjust the output voltage over a range of ±0.5%. This
allows systems designers to trim small system errors by setting
the reference to a voltage other than the preset output voltage.
An external mechanical or electrical potentiometer can be used
for this adjustment. Figure 17 illustrates how the output voltage
can be trimmed using the AD5273, an Analog Devices, Inc.,
10 kΩ potentiometer.
R1
470kΩ
POTENTIOMETER
10kΩ
ADR530
AD5273
R
VOUT
VS
Figure 17. Output Voltage Trim


Số phần tương tự - ADR550

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Mô tả tương tự - ADR550

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