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NE23300 bảng dữ liệu(PDF) 1 Page - California Eastern Labs

tên linh kiện NE23300
Giải thích chi tiết về linh kiện  SUPER LOW NOISE HJ FET
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nhà sản xuất  CEL [California Eastern Labs]
Trang chủ  http://www.cel.com
Logo CEL - California Eastern Labs

NE23300 bảng dữ liệu(HTML) 1 Page - California Eastern Labs

  NE23300 Datasheet HTML 1Page - California Eastern Labs NE23300 Datasheet HTML 2Page - California Eastern Labs NE23300 Datasheet HTML 3Page - California Eastern Labs NE23300 Datasheet HTML 4Page - California Eastern Labs NE23300 Datasheet HTML 5Page - California Eastern Labs  
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SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
NE23300
PART NUMBER
NE23300
PACKAGE OUTLINE
00 (Chip)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT1
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
dB
0.35
f = 12 GHz
dB
0.75
1.0
GA1
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
dB
15.0
f = 12 GHz
dB
10.0
10.5
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dBm
11.2
VDS = 2 V, IDS = 20 mA
dBm
12.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dB
11.8
VDS = 2 V, IDS = 20 mA
dB
12.8
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
80
VP
Pinch-off Voltage, VDS = 2 V, ID = 100
µA
V
-2.0
-0.8
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
70
IGSO
Gate to Source Leakage Current, VGS = -5 V
µA
0.5
10
RTH(CH-C)2
Thermal Resistance (Channel to Case)
°C/W
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high asso-
ciated gain make it suitable for space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
FEATURES
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3
µm
• GATE WIDTH: 280
µm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Frequency, f (GHz)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
California Eastern Laboratories
GA
NF
4.5
3.0
2.5
2.0
4.0
3.5
1.5
1.0
0.5
0
1
10
40
6
8
10
12
14
16
18
20
22


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