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STT3930N bảng dữ liệu(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3930N bảng dữ liệu(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente STT3930N 3.5A , 30V , RDS(ON) 58mΩ Ω Ω Ω N-Channel Enhancement Mode MOSFET 25-Nov-2013 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA=25°C 3.5 Continuous Drain Current 1 TA=70°C ID 2.8 A Pulsed Drain Current 2 IDM 16 A Continuous Source Current (Diode Conduction) 1 IS 1.25 A TA=25°C 1.3 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating t ≦ 10 sec 100 Maximum Junction to Ambient 1 Steady State RθJA 166 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 2 3 4 5 6 G G S S D D |
Số phần tương tự - STT3930N |
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Mô tả tương tự - STT3930N |
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