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MTBC7N10N3 bảng dữ liệu(PDF) 2 Page - Cystech Electonics Corp. |
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MTBC7N10N3 bảng dữ liệu(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C886N3 Issued Date : 2012.11.14 Revised Date : Page No. : 2/9 MTBC7N10N3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-ambient, max Rth,j-a 125 (Note 3) °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 231 (Note 4) °C/W Note :1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. 3. Surface mounted on a ceramic board (30×30×0.8mm), t≤10s. 4. Surface mounted on a FR-4 board (12×20×0.8mm), t≤10s; 357 °C/W when mounted on min. copper pad. Electrical Characteristics (TA=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0, ID=250μA △ BVDSS/△Tj - 107 - mV/°C ID=1mA, referenced to 25°C VGS(th) 1 1.3 2.5 V VDS=10V, ID=1mA △ VGS(th)/△Tj - -3 - mV/°C ID=1mA, referenced to 25°C IGSS - - ±10 VGS=±20V, VDS=0 - - 1 VDS=100V, VGS=0 IDSS - - 10 μA VDS=80V, VGS=0, Tj=125 °C - 389 520 ID=1A, VGS=10V - 407 560 ID=1A, VGS=4.5V *RDS(ON) 1 - 413 580 m Ω ID=1A, VGS=4V *GFS 1 1 2.4 - S ID=1A, VGS=10V Dynamic Ciss - 108 - Coss - 13 - Crss - 5.2 - pF VDS=25V, VGS=0, f=1MHz *td(ON) 1 2 - 5 - *tr 1 2 - 6 - *td(OFF) 1 2 - 18 - *tf 1 2 - 10 - ns VDS=50V, ID=0.5A,VGS=10V, RG=10Ω *Qg 1 2 - 2.9 - *Qgs 1 2 - 0.3 - *Qgd 1 2 - 1 - nC VDS=50V, ID=1A, VGS=5V Source-Drain Diode IS - - 0.8 A VSD 1 - 0.8 1.2 V IS=1A, VGS=0V 1 Pulse test : Pulse width≤300μs, Duty cycle≤2% 2 Independent of operating temperature 3 Pulse width limited by maximum junction temperature |
Số phần tương tự - MTBC7N10N3 |
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Mô tả tương tự - MTBC7N10N3 |
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