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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FDD6N50TM bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDD6N50TM bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted. Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD6N50TM FDD6N50 DPAK Tape and Reel 330 mm 16 mm 2500 units FDD6N50TM_WS FDD6N50S DPAK Tape and Reel 330 mm 16 mm 2500 units FDU6N50TU FDU6N50 IPAK Tube N/A N/A 75 units Symbol Parameter Conditions Min. Typ. Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 500 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C-- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C -- -- -- -- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A -- 0.76 0.9 Ω gFS Forward Transconductance VDS = 40 V, ID = 3 A -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 720 940 pF Coss Output Capacitance -- 95 190 pF Crss Reverse Transfer Capacitance -- 9 13.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 6 A, VGS = 10 V, RG = 25 Ω (Note 4) -- 6 20 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 25 60 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 400 V, ID = 6 A, VGS = 10 V (Note 4) -- 12.8 16.6 nC Qgs Gate-Source Charge -- 3.7 -- nC Qgd Gate-Drain Charge -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6 A, dIF/dt =100 A/μs -- 275 -- ns Qrr Reverse Recovery Charge -- 1.7 -- μC |
Số phần tương tự - FDD6N50TM |
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Mô tả tương tự - FDD6N50TM |
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