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2N1875 bảng dữ liệu(PDF) 1 Page - Digitron Semiconductors |
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1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N1875-2N1880 1.25 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol 2N1875 2N1876 2N1877 2N1878 2N1879 2N1880 Unit Repetitive peak off-state voltage VDRM 15 30 60 100 150 200 V Repetitive peak reverse voltage VRRM 15 30 60 100 150 200 V DC on-state current 100°C ambient 100°C case IT 250 1.25 mA A Repetitive peak on-state current ITRM Up to 30 A Peak one cycle surge (non-repetitive) on-state current ITSM 15 A Peak gate current IGM 250 mA Average gate current IG(AV) 25 mA Reverse gate voltage VGR 5 V Thermal resistance, junction to case R ӨJC 20 °C/W Operating and storage temperature range TJ, Tstg -65 to 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Test Condition Subgroup 2 (25°C test) Off-state current IDRM - 0.5 5 µA VDRM = rating, RGK = 1KΩ Reverse current IRRM - 0.5 10 µA VRRM = rating Reverse gate current IGR - 0.5 10 µA VGR = 2V Gate trigger current IGT - 5 20 µA VD = 5V, RGS = 10KΩ Gate trigger voltage VGT 0.44 0.52 0.60 V VD = 5V, RGS = 100Ω Anode trigger current (1) IAT - 100 - µA VD = 5V On-state voltage VT 0.8 1.8 2.5 V IT = 2A(pulse test) Holding current IH 0.3 1.0 3 mA IG = -150µA, VAA = 5V Subgroup 3 (25°C test) Turn-on time ton - 0.1 - µs Turn-off time toff - 0.5 - µs Gate trigger – on pulse width tpg(on) - 0.5 - µs IG = 20mA, IT = 0.5A, VD = 30V Circuit commutated turn-off time tq - 10 - µs IT = 0.5A, IR = 0.5A, RGK = 1KΩ Subgroup 4 (125°C test) High temperature off-state current IDRM - 5 20 µA VD = rating, RGK = 1KΩ High temperature reverse current IRRM - 15 100 µA VRRM = rating Note 1: For a maximum limit of 50µA, use suffix “-1” and drop 2N. Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
Số phần tương tự - 2N1875 |
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Mô tả tương tự - 2N1875 |
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