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LMH6551MMNOPB bảng dữ liệu(PDF) 4 Page - National Semiconductor (TI) |
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LMH6551MMNOPB bảng dữ liệu(HTML) 4 Page - National Semiconductor (TI) |
4 / 28 page LMH6551 SNOSAK7C – FEBRUARY 2005 – REVISED MARCH 2013 www.ti.com ±5V Electrical Characteristics (1) (continued) Single ended in differential out, TA= 25°C, G = +1, VS = ±5V, VCM = 0V, RF = RG = 365Ω, RL = 500Ω; Unless specified Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units VCM CMRR VID = 0V, 1V step on VCM pin, measure 70 75 dB VOD Input Resistance 25 k Ω Common Mode Gain ΔVO,CM/ΔVCM 0.995 0.999 1.005 V/V Output Performance Output Voltage Swing Single Ended, Peak to Peak ±7.38 ±7.8 V ±7.18 Output Common Mode Voltage Range VID = 0 V, ±3.69 ±3.8 V IOUT Linear Output Current VOUT = 0V ±50 ±65 mA ISC Short Circuit Current Output Shorted to Ground 140 mA VIN = 3V Single Ended (7)l Output Balance Error ΔVOUTCommon Mode −70 dB / ΔVOUTDIfferential , VOUT = 0.5 Vpp Differential, f = 10 MHz Miscellaneous Performance AVOL Open Loop Gain Differential 70 dB PSRR Power Supply Rejection Ratio DC, ΔVS = ±1V 74 90 dB Supply Current RL = ∞ 11 12.5 14.5 mA 16.5 (7) The maximum output current (IOUT) is determined by device power dissipation limitations. 5V Electrical Characteristics (1) Single ended in differential out, TA= 25°C, G = +1, VS = 5V, VCM = 2.5V, RF = RG = 365Ω, RL = 500Ω; Unless specifiedBoldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units SSBW Small Signal −3 dB Bandwidth RL = 500Ω, VOUT = 0.5 VPP 350 MHz LSBW Large Signal −3 dB Bandwidth RL = 500Ω, VOUT = 2 VPP 300 MHz 0.1 dB Bandwidth VOUT = 2 VPP 50 MHz Slew Rate 4V Step(4) 1800 V/ μs Rise/Fall Time, 10% to 90% 4V Step 2 ns Settling Time 4V Step, 0.05% 17 ns VCM Pin AC Performance (Common Mode Feedback Amplifier) Common Mode Small Signal 170 MHz Bandwidth Distortion and Noise Response HD2 2nd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL=800Ω −84 dBc HD2 VO = 2 VPP, f = 20 MHz, RL=800Ω −69 dBc HD3 3rd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL=800Ω −93 dBc HD3 VO = 2 VPP, f = 20 MHz, RL=800Ω −67 dBc en Input Referred Noise Voltage Freq ≥ 1 MHz 6.0 nV/ √Hz in Input Referred Noise Current Freq ≥ 1 MHz 1.5 pA/ √Hz (1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. (2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using Statistical Quality Control (SQC) methods. (3) Typical numbers are the most likely parametric norm. (4) Slew Rate is the average of the rising and falling edges. 4 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated Product Folder Links: LMH6551 |
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