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LMH6551MMNOPB bảng dữ liệu(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện LMH6551MMNOPB
Giải thích chi tiết về linh kiện  LMH6551 Differential, High Speed Op Amp
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LMH6551
SNOSAK7C – FEBRUARY 2005 – REVISED MARCH 2013
www.ti.com
±5V Electrical Characteristics
(1) (continued)
Single ended in differential out, TA= 25°C, G = +1, VS = ±5V, VCM = 0V, RF = RG = 365Ω, RL = 500Ω; Unless specified
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min (2)
Typ (3)
Max (2)
Units
VCM CMRR
VID = 0V, 1V step on VCM pin, measure
70
75
dB
VOD
Input Resistance
25
k
Common Mode Gain
ΔVO,CM/ΔVCM
0.995
0.999
1.005
V/V
Output Performance
Output Voltage Swing
Single Ended, Peak to Peak
±7.38
±7.8
V
±7.18
Output Common Mode Voltage Range VID = 0 V,
±3.69
±3.8
V
IOUT
Linear Output Current
VOUT = 0V
±50
±65
mA
ISC
Short Circuit Current
Output Shorted to Ground
140
mA
VIN = 3V Single Ended
(7)l
Output Balance Error
ΔVOUTCommon Mode
−70
dB
/
ΔVOUTDIfferential , VOUT = 0.5 Vpp
Differential, f = 10 MHz
Miscellaneous Performance
AVOL
Open Loop Gain
Differential
70
dB
PSRR
Power Supply Rejection Ratio
DC,
ΔVS = ±1V
74
90
dB
Supply Current
RL = ∞
11
12.5
14.5
mA
16.5
(7)
The maximum output current (IOUT) is determined by device power dissipation limitations.
5V Electrical Characteristics
(1)
Single ended in differential out, TA= 25°C, G = +1, VS = 5V, VCM = 2.5V, RF = RG = 365Ω, RL = 500Ω; Unless
specifiedBoldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min (2)
Typ (3)
Max (2)
Units
SSBW
Small Signal
−3 dB Bandwidth
RL = 500Ω, VOUT = 0.5 VPP
350
MHz
LSBW
Large Signal
−3 dB Bandwidth
RL = 500Ω, VOUT = 2 VPP
300
MHz
0.1 dB Bandwidth
VOUT = 2 VPP
50
MHz
Slew Rate
4V Step(4)
1800
V/
μs
Rise/Fall Time, 10% to 90%
4V Step
2
ns
Settling Time
4V Step, 0.05%
17
ns
VCM Pin AC Performance (Common Mode Feedback Amplifier)
Common Mode Small Signal
170
MHz
Bandwidth
Distortion and Noise Response
HD2
2nd Harmonic Distortion
VO = 2 VPP, f = 5 MHz, RL=800Ω
−84
dBc
HD2
VO = 2 VPP, f = 20 MHz, RL=800Ω
−69
dBc
HD3
3rd Harmonic Distortion
VO = 2 VPP, f = 5 MHz, RL=800Ω
−93
dBc
HD3
VO = 2 VPP, f = 20 MHz, RL=800Ω
−67
dBc
en
Input Referred Noise Voltage
Freq
≥ 1 MHz
6.0
nV/
√Hz
in
Input Referred Noise Current
Freq
≥ 1 MHz
1.5
pA/
√Hz
(1)
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
(2)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using
Statistical Quality Control (SQC) methods.
(3)
Typical numbers are the most likely parametric norm.
(4)
Slew Rate is the average of the rising and falling edges.
4
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Product Folder Links: LMH6551


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