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LM7322QMA bảng dữ liệu(PDF) 5 Page - Texas Instruments |
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LM7322QMA bảng dữ liệu(HTML) 5 Page - Texas Instruments |
5 / 35 page LM7321, LM7322 www.ti.com SNOSAW8D – MAY 2008 – REVISED MARCH 2013 ±5V Electrical Characteristics (1) (continued) Unless otherwise specified, all limited ensured for TA = 25°C, V + = 5V, V− = −5V, V CM = 0V, VOUT = 0V, and RL > 1 MΩ to 0V. Boldface limits apply at the temperature extremes. Min Typ Max Symbol Parameter Condition Units (2) (3) (2) RL = 10 kΩ to 0V 100 250 VID = 100 mV 280 Output Voltage Swing High RL = 2 kΩ to 0V 160 350 VID = 100 mV 450 mV from VOUT either rail RL = 10 kΩ to 0V 35 200 VID = −100 mV 250 Output Voltage Swing Low RL = 2 kΩ to 0V 80 200 VID = −100 mV 250 Sourcing 35 70 VID = 200 mV, VOUT = −5V (6) 20 IOUT Output Current mA Sinking 50 85 VID = −200 mV, VOUT = 5V (6) 30 1.0 1.3 LM7321 2 IS Supply Current VCM = −4.5V mA 2.3 2.8 LM7322 3.8 SR Slew Rate (7) AV = +1, VI = 8V Step 12.3 V/µs fu Unity Gain Frequency RL = 2 kΩ, CL = 20 pF 9 MHz GBW Gain Bandwidth f = 50 kHz 16 MHz en Input Referred Voltage Noise Density f = 2 kHz 14.3 nV/ in Input Referred Current Noise Density f = 2 kHz 1.35 pA/ f = 1 kHz, RL = 100 kΩ, AV = +2 THD+N Total Harmonic Distortion + Noise −79 dB VOUT = 8 VPP CT Rej. Crosstalk Rejection f = 100 kHz, Driver RL = 10 kΩ 60 dB (6) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms. (7) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower. ±15V Electrical Characteristics (1) Unless otherwise specified, all limited ensured for TA = 25°C, V + = 15V, V− = −15V, V CM = 0V, VOUT = 0V, and RL > 1MΩ to 15V. Boldface limits apply at the temperature extremes. Min Typ Max Symbol Parameter Condition Units (2) (3) (2) −6 ±0.7 +6 VOS Input Offset Voltage VCM = −14.5V and VCM = 14.5V mV −8 +8 VCM = −14.5V and VCM = 14.5V TC VOS Input Offset Voltage Temperature Drift ±2 µV/°C (4) VCM = −14.5V −2 −1.1 (5) −2.5 IB Input Bias Current µA VCM = 14.5V 0.45 1.0 (5) 1.5 30 300 IOS Input Offset Current VCM = −14.5V and VCM = 14.5V nA 500 (1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. (2) All limits are ensured by testing or statistical analysis. (3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change. (5) Positive current corresponds to current flowing into the device. Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM7321 LM7322 |
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