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STP80N20M5 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 14 page July 2010 Doc ID 15734 Rev 2 1/14 14 STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK MDmesh™ V Power MOSFET Features ■ Amongst the best RDS(on) * area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application Switching applications Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Type VDSS @ TJmax RDS(on) max ID STB80N20M5 200 V < 0.023 Ω 61 A STP80N20M5 61 A 1 2 3 TO-220 D2PAK 1 3 Table 1. Device summary Order codes Marking Package Packaging STB80N20M5 80N20M5 D2PAK Tape and reel STP80N20M5 80N20M5 TO-220 Tube www.st.com |
Số phần tương tự - STP80N20M5 |
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Mô tả tương tự - STP80N20M5 |
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