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MTV25N50E bảng dữ liệu(PDF) 2 Page - Motorola, Inc |
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2 / 10 page MTV25N50E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 500 — — 0.51 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 10 100 µAdc Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 — 2.9 7.0 4.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 12.5 Adc) RDS(on) — 0.19 0.2 Ohm Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 25 Adc) (VGS = 10 Vdc, ID = 12.5 Adc, TJ = 125°C) VDS(on) — — 5.4 — 6.0 5.3 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc) gFS 11 17 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 4700 6580 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 520 728 Transfer Capacitance f = 1.0 MHz) Crss — 200 280 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 250 Vdc, ID = 25 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) — 37 70 ns Rise Time (VDD = 250 Vdc, ID = 25 Adc, VGS = 10 Vdc, RG = 9.1 Ω) tr — 137 280 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) — 118 240 Fall Time G = 9.1 Ω) tf — 112 230 Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 25 Adc, VGS = 10 Vdc) QT — 132 180 nC (See Figure 8) (VDS = 400 Vdc, ID = 25 Adc, VGS = 10 Vdc) Q1 — 29 — (VDS = 400 Vdc, ID = 25 Adc, VGS = 10 Vdc) Q2 — 63 — Q3 — 61 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 25 Adc, VGS = 0 Vdc) (IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.9 0.79 1.1 — Vdc Reverse Recovery Time (IS = 25 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 501 — ns (IS = 25 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 332 — (IS = 25 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 170 — Reverse Recovery Stored Charge QRR — 9.42 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD — 5.0 — nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS — 13 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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