STB18NM60ND datasheet(3/22 Pages) STMICROELECTRONICS

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Giải thích chi tiết về linh kiện	N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK

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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK, TO-

220, TO-247

TO-220FP

VDS

Drain-source voltage

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

13

13 (1)

1.

Limited by maximum junction temperature

A

ID

Drain current (continuous) at TC = 100 °C

8.19

8.19 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

52

52 (1)

A

PTOT

Total dissipation at TC = 25 °C

130

30

W

dv/dt (3)

3.

ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS(peak) ≤ V(BR)DSS

Peak diode recovery voltage slope

40

V/ns

dv/dt (4)

4.

VDS ≤ 480 V

MOSFET dv/dt ruggedness

40

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC=25 °C)

--

2500

V

Tstg

Storage temperature

-55 to 150

°C

Tj

Operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

D²PAK

TO-220FP TO-220

TO-247

Unit

Rthj-case

Thermal resistance junction-case max

0.96

4.17

0.96

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

50

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

30

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tj max)

3.5

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

187

mJ

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STB18NM60ND	313Kb / 2P	isc N-Channel MOSFET Transistor

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