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Giải thích chi tiết về linh kiện  N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK
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Electrical characteristics
STD13NM60ND, STF13NM60ND, STP13NM60ND
4/21
DocID024645 Rev 1
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
600
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 600 V
V
DS
= 600 V, T
C
=125 °C
1
100
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA3
4
5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 5.5 A
0.32
0.38
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 50 V, f =1 MHz,
V
GS
= 0
-845
-
pF
C
oss
Output capacitance
-
47
-
pF
C
rss
Reverse transfer
capacitance
-2.5
-
pF
C
oss eq.
(1)
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0, V
DS
= 0V to 480 V
-
121
-
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-4.3
-
Ω
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 11 A
V
GS
= 10 V
(see
Figure 18)
-
24.5
-
nC
Q
gs
Gate-source charge
-
4.8
-
nC
Q
gd
Gate-drain charge
-
17
-
nC


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