STB25N80K5 datasheet(4/22 Pages) STMICROELECTRONICS

tên linh kiện	STB25N80K5

Giải thích chi tiết về linh kiện	N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK

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Electrical characteristics

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

4/22

DocID023466 Rev 2

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

VDS = 800 V, Tc=125 °C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID= 10 A

0.19

0.260

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-1600

-

pF

Coss

Output capacitance

-

130

-

pF

Crss

Reverse transfer

capacitance

-2

-

pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

-185

-

pF

Co(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-300

-

pF

RG

Intrinsic gate resistance

f = 1 MHz open drain

-

4

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 19.5 A

VGS =10 V

(see Figure 19)

-40

-

nC

Qgs

Gate-source charge

-

10

nC

Qgd

Gate-drain charge

-

25

nC

Số phần tương tự - STB25N80K5

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