STH270N8F7-6 datasheet(4/21 Pages) STMICROELECTRONICS

tên linh kiện	STH270N8F7-6

Giải thích chi tiết về linh kiện	N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

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Electrical characteristics

STH270N8F7-2, STH270N8F7-6, STP270N8F7

4/21

DocID024006 Rev 3

2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

80

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 80 V

VDS = 80 V; TC=125 °C

10

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = +20 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on-

resistance

For H2PAK-2, H2PAK-6:

VGS= 10 V, ID= 90 A

0.0017 0.0021

Ω

For TO-220:

VGS= 10 V, ID= 90 A

0.0021 0.0025

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =50 V, f=1 MHz,

VGS=0

-

13600

-

pF

Coss

Output capacitance

-

2050

-

pF

Crss

Reverse transfer

capacitance

-236

-

pF

Qg

Total gate charge

VDD=40 V, ID = 180 A

VGS =10 V

Figure 19

-193

-

nC

Qgs

Gate-source charge

-

96

-

nC

Qgd

Gate-drain charge

-

46

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=40 V, ID= 90 A,

RG=4.7 Ω, VGS= 10 V

Figure 18

-56

-

ns

tr

Rise time

-

180

-

ns

td(off)

Turn-off delay time

-

98

-

ns

tf

Fall time

-

42

-

ns

Số phần tương tự - STH270N8F7-6

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