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Giải thích chi tiết về linh kiện  N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages
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Electrical characteristics
STH310N10F7-2, STH310N10F7-6
4/19
DocID024040 Rev 2
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 μA100
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V
1
μA
V
DS
= 100 V, T
C
= 125°C
100
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= 20 V
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
2.5
3.5
4.5
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 60 A
1.9
2.3
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
12800
-
pF
C
oss
Output capacitance
-
3500
-
pF
C
rss
Reverse transfer
capacitance
-170
-
pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 180 A,
V
GS
= 10 V
(see
Figure 14)
-180
-
nC
Q
gs
Gate-source charge
-
78
-
nC
Q
gd
Gate-drain charge
-
34
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 90 A
R
G
=4.7
Ω V
GS
= 10 V
(see
Figure 13,
Figure 18)
-62
-
ns
t
r
Rise time
-
108
-
ns
t
d(off)
Turn-off delay time
-
148
-
ns
t
f
Fall time
-
40
-
ns


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