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STL8N10LF3 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package
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Electrical characteristics
STL8N10LF3
4/13
Doc ID 023977 Rev 1
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
100
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 100 V
1
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
1
3
V
RDS(on)
Static drain-source on-
resistance
VGS= 10 V, ID= 4 A
VGS= 5 V, ID= 4 A
25
40
35
50
m
Ω
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
970
115
11.5
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=50 V, ID = 7.8 A
VGS =10 V
Figure 13
-
20.5
4
5
-
nC
nC
nC
RG
Intrinsic gate resistance
f=1 MHz open drain
3.65
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=50 V, ID= 7.8 A,
RG=4.7 Ω, VGS=10 V
Figure 12
-
8.7
9.6
50.6
5.2
-
ns
ns
ns
ns


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