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LM3248 bảng dữ liệu(PDF) 5 Page - Texas Instruments |
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LM3248 bảng dữ liệu(HTML) 5 Page - Texas Instruments |
5 / 31 page LM3248 www.ti.com SNVSA01A – JULY 2013 – REVISED SEPTEMBER 2013 ELECTRICAL CHARACTERISTICS (BOOST) Limits in standard typeface are for TA = 25°C. Limits in boldface type apply over the full operating ambient temperature range ( −30°C ≤ TA ≤ +90°C). Unless otherwise noted, all specifications apply with VBATT = 3.0V and Buck in IDLE state. Symbol Parameter Condition Min Typ Max Units Open Loop (1), VCON = 1.44V, ILIM-BOOST,PFET PFET valley current limit 4.1 A VOUT_BUCK = 3.6V Boost internal oscillator FOSC-Boost 2G/3G/4G mode, PWM mode, average 2.7 MHz frequency (1) Current limit is built-in, fixed, and not adjustable. SYSTEM CHARACTERISTICS (BOOST) The following spec table entries are specified by design and verifications providing the component values in the Typical Application Diagram are used: L = 1.0 µH (TOKO 1276AS-H-1R0N); CIN = 10 µF (Murata GRM155R61A106M); and COUT = 1µF (Taiyo Yuden LWK107B7105KA-T) + 10 µF (Murata GRM155R61A106M). These parameters are not verified by production testing. (1) (The Boost stage output voltage equation is given in (2).) Min and Max values are specified over the ambient temperature range TA = −30°C ≤ TA ≤ 90°C. Unless otherwise noted, typical values are specified at VBATT = 3.0V, Buck in IDLE, and TA = 25°C. Symbol Parameter Condition Min Typ Max Units Boost Bypass mode 2.7 5.5 V VCON = 1.60V , MODE = LOW (3G/4G), 4.45 VOUT_BOOST Boost output voltage Load = 100 mA (2) VCON = 1.46V , MODE = HIGH (2G), 4.65 Load = 100 mA (2) MODE = LOW; BOOST_GATE = HIGH; mV SW_BOOST = switching; –50 0 37 VCON = (VBATT - VGOTOBOOST)/2.5 VGOTOBOOST Boost turn-on threshold voltage MODE = HIGH; BOOST_GATE = HIGH; SW_BOOST = switching; 125 VCON = (VBATT - VGOTOBOOST)/2.5 Minimum time from ENABLE = TENABLE to Initially in Idle State: Boost in 0% duty cycle HIGH (and remains steady) to 25 BOOST_GATE (bypass) BOOST_GATE rising edge µs TBOOST_GATE_Active Minimum time to assert BOOST_GATE signal must remain HIGH BOOST_GATE signal before 45 during this interval next TTI slot boundary Max input current averaged VBATT = 2.7V, VOUT_BOOST = 4.2V IIN-BOOST-MAX 3.5 A across a 2G burst (RMS) PA active during GSM burst (2) Duty CycleMAX- PWM maximum duty cycle IOUT-BOOST < 1 mA 70 % BOOST VBATT = 3.4V to 3.7V, ΔV = ±300 mV, VLINE-TR Line transient response TR =TF = 10 µs, VOUT_BUCK = 3.7V, 150 RLOAD_BUCK = 4Ω, MODE = 3G/4G (2) mVpp VBATT = 2.7V, IOUT_BUCK = 10 mA to 850 mA, VLOAD-TR Load transient response 600 IOUT, TR = TF = 10 µs VOUT_BUCK = 3.7V, MODE = 3G/4G (2) VBATT = 2.7V, VBOOST = 3.4V, IOUT = 2A, Boost ripple voltage at worst- VBOOST-RIPPLE 2G mode (Sufficient overhead between 100 mVpp case conditions VBOOST and VOUT ) (1) Parameter is specified by design, characterization testing, or statistical analysis. Typical numbers are not verified by production testing, but do represent the most likely norm. (2) VOUT-BOOST = VCON * 2.5 + [≈ 450 mV(3G/4G) or ≈ 950 mV(2G)]. Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM3248 |
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