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2SK1062TE85LF bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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2SK1062TE85LF bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor

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2SK1062
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
±100
nA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 1 mA, VGS = 0
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2
3.5
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 50 mA
100
mS
Drain-source ON resistance
RDS (ON)
ID = 50 mA, VGS = 10 V
0.6
1.0
Ω
Drain-source ON voltage
VDS (ON)
ID = 50 mA, VGS = 10 V
30
50
mV
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
55
65
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
13
18
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
40
50
pF
Rise time
tr
8
Turn-on time
ton
14
Fall time
tf
35
Switching time
Turn-off Time
toff
VIN: tr, tf < 5 ns
D.U <= 1% (Zout = 50 Ω)
75
ns
Note: This transistor is the electrostatic sensitive device. Please handle with caution.


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