2SA1020-Y datasheet(1/5 Pages) TOSHIBA

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2SA1020

2010-11-09

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1020

Power Amplifier Applications

Power Switching Applications

• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

• High collector power dissipation: PC = 900 mW

• High-speed switching: tstg = 1.0 μs (typ.)

• Complementary to 2SC2655

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−2

A

Base current

IB

−0.2

A

Collector power dissipation

PC

900

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Số phần tương tự - 2SA1020-Y

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Unisonic Technologies	2SA1020-Y-AB3-B	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
	2SA1020-Y-AB3-K	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
	2SA1020-Y-AB3-R	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
	2SA1020-Y-T9N-B	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
	2SA1020-Y-T9N-K	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR

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