STB5N52K3 datasheet(5/23 Pages) ETC2

tên linh kiện	STB5N52K3

Giải thích chi tiết về linh kiện	N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3

Electrical characteristics

Doc ID 16952 Rev 2

5/23

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 420 V, ID = 4.4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

9

11

29

16

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

4.4

17.6

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 4.4 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4.4 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

-

210

1.3

12

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4.4 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 20)

-

240

1.6

13

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

BVGSO

Gate-source breakdown

voltage

Igs=± 1 mA (open drain)

30

-

V

Số phần tương tự - STB5N52K3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB5N52K3	1Mb / 23P	N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET
STMicroelectronics	STB5N52K3	1Mb / 23P	N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

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Mô tả tương tự - STB5N52K3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB7N52K3	380Kb / 15P	N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
	STF3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK February 2011 Rev 1
	STD6N62K3	433Kb / 17P	N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET
	STD6N52K3	249Kb / 12P	N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET
	STD4N52K3	1Mb / 21P	N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
	STP4N52K3	1Mb / 2P	N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages February 2013 Rev 2
STATEK CORPORATION	STD3LN62K3	1Mb / 21P	N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFE DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics	STB3N62K3	567Kb / 19P	N-channel 620 V, 2.2 廓 , 2.7 A SuperMESH3??Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
	STB7N52K3	1Mb / 18P	N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
	STP5N52K3	1Mb / 23P	N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

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