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AD669 bảng dữ liệu(PDF) 4 Page - Analog Devices |
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AD669 bảng dữ liệu(HTML) 4 Page - Analog Devices |
4 / 12 page AD669 REV. A –4– ORDERING GUIDE Linearity Gain Temperature Error Max TC max Package Package Model Range TMIN–TMAX ppm/ C Description Option* AD669AN –40 °C to +85°C ±4 LSB 25 Plastic DIP N-28 AD669AR –40 °C to +85°C ±4 LSB 25 SOIC R-28 AD669BN –40 °C to +85°C ±2 LSB 15 Plastic DIP N-28 AD669BR –40 °C to +85°C ±2 LSB 15 SOIC R-28 AD669AQ –40 °C to +85°C ±4 LSB 15 Cerdip Q-28 AD669BQ –40 °C to +85°C ±2 LSB 15 Cerdip Q-28 AD669SQ –55 °C to +125°C ±4 LSB 15 Cerdip Q-28 AD669/883B** –55 °C to +125°C** ** ** ** ** N = Plastic DIP; Q = Cerdip; R = SOIC. ** Refer to AD669/883B military data sheet. ESD SENSITIVITY The AD669 features input protection circuitry consisting of large transistors and polysilicon series resistors to dissipate both high-energy discharges (Human Body Model) and fast, low-energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883: C, the AD669 has been classified as a Class 2 device. Proper ESD precautions are strongly recommended to avoid functional damage or performance degradation. Charges as high as 4000 volts readily accumulate on the human body and test equipment and discharge without detection. Unused devices must be stored in conductive foam or shunts, and the foam should be discharged to the destination socket before devices are removed. For further information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual. WARNING! ESD SENSITIVE DEVICE ABSOLUTE MAXIMUM RATINGS * VCC to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V VEE to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V VLL to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1 V Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0 V REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10.5 V Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . . ±10.5 V REF OUT, VOUT . . . . . . Indefinite Short To AGND, DGND, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC, VEE, and VLL Power Dissipation (Any Package) To +60 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW Derates above +60 °C . . . . . . . . . . . . . . . . . . . . . .8.7 mW/°C Storage Temperature . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300 °C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indi cated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN CONFIGURATION DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DGND V EE V CC V LL CS L1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 TOP VIEW (Not to Scale) DB7 DB6 DB5 DB4 DB3 DB2 AGND LDAC DB0 DB1 AD669 REF OUT REF IN VOUT SPAN/BIP OFFSET TEMPERATURE – °C 10 0.001 125 0.01 –25 –50 0.1 1 100 75 50 25 0 –60dB –20dB 0dB THD+N vs. Temperature FREQUENCY – Hz 10 0.001 0.01 0.1 1 100 10000 1000 –60dB –20dB 0dB THD+N vs. Frequency |
Số phần tương tự - AD669 |
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Mô tả tương tự - AD669 |
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