©2001 Fairchild Semiconductor Corporation

1

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FQD17P06/ FQU17P06 Rev.C0

June 2013

FQD17P06 / FQU17P06

- 60 V, - 12 A, 135 m

Ω

Description

This P-Channel enhancement mode power MOSFET is

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC motor

control, and variable switching power applications.

Features

• Low Gate Charge (Typ. 21 nC)

• Low Crss (Typ. 80 pF)

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

Thermal Characteristics

Symbol

Parameter

FQD17P06 / FQU17P06

Unit

Drain-Source Voltage

-60

V

Drain Current

-12

A

-7.6

A

Drain Current

- Pulsed

(Note 1)

-48

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

300

mJ

Avalanche Current

(Note 1)

-12

A

Repetitive Avalanche Energy

(Note 1)

4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

-7.0

V/ns

2.5

W

44

W

- Derate above 25°C

0.35

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Symbol

Parameter

FQD17P06 / FQU17P06

Unit

Thermal Resistance, Junction-to-Case, Max.

2.85

°C/W

Thermal Resistance, Junction-to-Ambient *, Typ.

50

Thermal Resistance, Junction-to-Ambient, Max.

110

* When mounted on the minimum pad size recommended (PCB Mount)

●

●

●

▲

▶

●

●

●

▲

▶

S

D

G

S

D

G

D-PAK

(TO252)

I-PAK

(TO251)

G D S