FQD13N10_13 datasheet(1/9 Pages) FAIRCHILD

tên linh kiện	FQD13N10

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Absolute Maximum Ratings T

C = 25°C unless otherwise noted

Thermal Characteristics

Symbol

Parameter

FQD13N10 / FQU13N10

Unit

VDSS

Drain-Source Voltage

100

V

ID

Drain Current

- Continuous (TC = 25°C)

10

A

- Continuous (TC = 100°C)

6.3

A

IDM

Drain Current

- Pulsed

(Note 1)

40

A

VGSS

Gate-Source Voltage

± 25

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

95

mJ

IAR

Avalanche Current

(Note 1)

10

A

EAR

Repetitive Avalanche Energy

(Note 1)

4.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

PD

Power Dissipation (TA = 25°C) *

2.5

W

Power Dissipation (TC = 25°C)

40

W

- Derate above 25°C

0.32

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Unit

RθJC

Thermal Resistance, Junction-to-Case

--

3.13

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

! "

!

"

! "

!

"

S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D

March 2013

FQD13N10 / FQU13N10

N-Channel QFET MOSFET

100 V, 10 A, 180 mΩ

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

Features

• 10 A, 100 V, RDS(on) = 180 mΩ (Max) @VGS = 10

V, ID = 5.0 A

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 20 pF)

• 100% Avalanche Tested

FQD13N10 / FQU13N10 Rev. C0

www.fairchildsemi.com

Số phần tương tự - FQD13N10_13

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Fairchild Semiconductor	FQD13N10L	548Kb / 9P	100V LOGIC N-Channel MOSFET
Fairchild Semiconductor	FQD13N10L	998Kb / 10P	N-Channel QFET MOSFET
VBsemi Electronics Co.,...	FQD13N10L	1,010Kb / 7P	N-Channel 100 V (D-S) MOSFET
Guangdong Youtai Semico...	FQD13N10L	854Kb / 7P	100V N-Channel MOSFET
VBsemi Electronics Co.,...	FQD13N10LTF	1,010Kb / 7P	N-Channel 100 V (D-S) MOSFET

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Mô tả tương tự - FQD13N10_13

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