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AD621ARZ bảng dữ liệu(PDF) 5 Page - ATMEL Corporation

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Giải thích chi tiết về linh kiện  Three-wire Serial Electrically Erasable Programmable Read-only Memory
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5
8735A–SEEPR–1/11
Atmel AT93C56B/66B
Table 1-4.
Instruction Set for the Atmel AT93C56B and Atmel AT93C66B
Note:
The Xs in the address field represent “don’t care” values, and must be clocked
2.
Functional Description
The Atmel
® AT93C56B/66B is accessed via a simple and versatile three-wire serial communication interface. Device
operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of
CS, and consists of a start bit (logic one) followed by the appropriate op code and the desired memory address location.
READ (READ): The read (READ) instruction contains the address code for the memory location to be read. After the
instruction and address are decoded, data from the selected memory location is available at the serial output pin, DO.
Output data changes are synchronized with the rising edges ofthe serial clock, SK. It should be noted that a dummy bit
(logic zero) precedes the 8- or 16-bit data output string. The AT93C56B/66B supports sequential read operations. The
device will automatically increment the internal address pointer and clock out the next memory location as long as chip
select (CS) is held high. In this case, the dummy bit (logic zero) will not be clocked out between memory locations, thus
allowing for a continuous stream of data to be read.
ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes into the erase/write disable
(EWDS) state when power is first applied. An erase/write enable (EWEN) instruction must be executed first before any
programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until
an EWDS instruction is executed or V
CC power is removed from the part.
ERASE (ERASE): The erase (ERASE) instruction programs all bits in the specified memory location to the logical-one
state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the
ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t
CS). A logic one at pin DO
indicates that the selected memory location has been erased and the part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8- or 16-bits of data to be written into the specified memory
location. The self-timed programming cycle, t
WP, starts after the last bit of data is received at serial data input pin DI. The DO
pin outputs the ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t
CS). A
logic zero at DO indicates that programming is still in progress. A logic one indicates that the memory location at the
specified address has been written with the data pattern contained in the instruction and the part is ready for further
instructions. A ready/busy status cannot be obtained if CS is brought high after the end of the self-timed programming
cycle, t
WP.
ERASE ALL (ERAL): The erase all (ERAL) instruction programs every bit in the memory array to the logic one state, and
is primarily used for testing purposes. The DO pin outputs the ready/busy status of the part if CS is brought high after being
kept low for a minimum of 250ns (t
CS). The ERAL instruction is valid only at VCC = 5.0V 10%.
Instruction
SB
Op
Code
Address
Data
Comments
x 8
x 16
x 8
x 16
READ
1
10
A
8 – A0
A
7 – A0
Reads data stored in memory at specified address
EWEN
1
00
11XXXXXXX
11XXXXXX
Write enable must precede all programming modes
ERASE
1
11
A
8 – A0
A
7 – A0
Erases memory location A
n – A0
WRITE
1
01
A
8 – A0
A
7 – A0
D
7 – D0
D
15 – D0
Writes memory location A
n – A0
ERAL
1
00
10XXXXXXX
10XXXXXX
Erases all memory locations. Valid only at
V
CC = 4.5V to 5.5V
WRAL
1
00
01XXXXXXX
01XXXXXX
D
7 – D0
D
15 – D0
Writes all memory locations. Valid only at
V
CC = 5.0V ±10% and disable register cleared
EWDS
1
00
00XXXXXXX
00XXXXXX
Disables all programming instructions


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