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AD621ARZ bảng dữ liệu(PDF) 5 Page - ATMEL Corporation |
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5 / 21 page 5 8735A–SEEPR–1/11 Atmel AT93C56B/66B Table 1-4. Instruction Set for the Atmel AT93C56B and Atmel AT93C66B Note: The Xs in the address field represent “don’t care” values, and must be clocked 2. Functional Description The Atmel ® AT93C56B/66B is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of CS, and consists of a start bit (logic one) followed by the appropriate op code and the desired memory address location. READ (READ): The read (READ) instruction contains the address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin, DO. Output data changes are synchronized with the rising edges ofthe serial clock, SK. It should be noted that a dummy bit (logic zero) precedes the 8- or 16-bit data output string. The AT93C56B/66B supports sequential read operations. The device will automatically increment the internal address pointer and clock out the next memory location as long as chip select (CS) is held high. In this case, the dummy bit (logic zero) will not be clocked out between memory locations, thus allowing for a continuous stream of data to be read. ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes into the erase/write disable (EWDS) state when power is first applied. An erase/write enable (EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is executed or V CC power is removed from the part. ERASE (ERASE): The erase (ERASE) instruction programs all bits in the specified memory location to the logical-one state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t CS). A logic one at pin DO indicates that the selected memory location has been erased and the part is ready for another instruction. WRITE (WRITE): The Write (WRITE) instruction contains the 8- or 16-bits of data to be written into the specified memory location. The self-timed programming cycle, t WP, starts after the last bit of data is received at serial data input pin DI. The DO pin outputs the ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t CS). A logic zero at DO indicates that programming is still in progress. A logic one indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the part is ready for further instructions. A ready/busy status cannot be obtained if CS is brought high after the end of the self-timed programming cycle, t WP. ERASE ALL (ERAL): The erase all (ERAL) instruction programs every bit in the memory array to the logic one state, and is primarily used for testing purposes. The DO pin outputs the ready/busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t CS). The ERAL instruction is valid only at VCC = 5.0V 10%. Instruction SB Op Code Address Data Comments x 8 x 16 x 8 x 16 READ 1 10 A 8 – A0 A 7 – A0 Reads data stored in memory at specified address EWEN 1 00 11XXXXXXX 11XXXXXX Write enable must precede all programming modes ERASE 1 11 A 8 – A0 A 7 – A0 Erases memory location A n – A0 WRITE 1 01 A 8 – A0 A 7 – A0 D 7 – D0 D 15 – D0 Writes memory location A n – A0 ERAL 1 00 10XXXXXXX 10XXXXXX Erases all memory locations. Valid only at V CC = 4.5V to 5.5V WRAL 1 00 01XXXXXXX 01XXXXXX D 7 – D0 D 15 – D0 Writes all memory locations. Valid only at V CC = 5.0V ±10% and disable register cleared EWDS 1 00 00XXXXXXX 00XXXXXX Disables all programming instructions |
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