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PZTA92 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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PNP High Voltage Amplifier
This device is designed for high voltage driver applications.
Sourced from Process 76.
MMBTA92
MPSA92
PZTA92
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
300
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA92
*MMBTA92
**PZTA92
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2D
B
C
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 2000 Fairchild Semiconductor International
MPSA92/MMBTA92/PZTA92 Rev A


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